IMPATT
基本解釋
- n.碰撞雪崩渡越時間二極管
英漢例句
- The peak power output of pulsed IMPATT source of 3.2W at 1% duty cycle is achieved at 30.52GHz, frequency chirp during the bias pulse is less than 800MHz.
振蕩源在30.;52GHz的頻率上;脈沖峰值功率為3 - The corresponding curves are given here. With these results in mind, 3-mm band P+NN+ IMPATT and 8-mm band P+PNN+ DDR avalanche devices have been designed and developed resulting in excellent performence.
已利用這些結果設計和研制成3mm P~+NN~+崩越二極管和8mmP~+PNN~+雙漂移崩越二極管;獲得了良好性能. - Analysis of Transit Angle of DDR IMPATT Diode
雙漂移崩越二極管的渡越角分析 - Thermal Resistance Measurement of IMPATT Diodes
IMPATT二極管熱阻測試 - J-BAND SILICON DDR IMPATT DEVICE
J波段硅DDR IMPATT器件