SIMOX

基本解釋

Based on the SIMOX SOI wafer,the SOI structure pressure gauge chip was designed,and the gauge chips were manufactured with MEMS techniques.
在 SIMOX 技術(shù) SOI 晶圓的基礎(chǔ)上,設(shè)計了壓力敏感芯片結(jié)構(gòu),并基于 MEMS 工藝制作了芯片。
Abstract Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
摘要研究了在改性注氧隔離（SIMOX）材料上制備的具有環(huán)柵和H型柵結(jié)構(gòu)的部分耗盡NMOS晶體管在三種不同偏置狀態(tài)的總劑量輻照效應(yīng)。
Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment.
傳統(tǒng)的MOS電容結(jié)構(gòu)測試電學(xué)特性應(yīng)用到SOI圓片是有其局限性的,在本實驗中直接利用SOI圓片的SIS(Silicon-Insulator-Silicon)結(jié)構(gòu),將SOI圓片的無損電學(xué)表征方法應(yīng)用到實際的表征當(dāng)中去。
Effect of Two Step Annealing on Formation of SIMOX Structure
兩步退火對SIMOX結(jié)構(gòu)形成的影響
Behavior of Residual Oxygen in Top Si Layer of SIMOX Studied by PL and SIMS
SIMOX材料頂層硅膜中殘余氧的行為