VDSM

基本解釋

• 超深亞微米

同根派生

• VDSM相關(guān)詞

英漢例句

• Interconnect delay has become a deterministic factor in VDSM design.
  超深亞微米)設(shè)計中互連線延遲已在電路延遲中起到?jīng)Q定性作用。
• The optical lithography correction techniques become key technologies in the IC designing and manufacturing of VDSM.
  光刻校正技術(shù)已成為超深亞微米下集成電路設(shè)計和制造中關(guān)鍵的技術(shù)。
• For switchbox routing in VDSM technology, the routing algorithm with alterable parameters for optimizing crosstalk is presented.
  摘要針對超深亞微米芯片設(shè)計中的開關(guān)盒布線問題提出了可變參數(shù)的串?dāng)_優(yōu)化布線算法。
• Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given.
  文中同時分析了柵寬與 SNM的關(guān)系 ,其結(jié)論與實驗結(jié)果一致 ,并給出了 VDSM SRAM存儲單元設(shè)計中應(yīng)注意的問題
• Impact of Threshold Voltage on VDSM SRAM Memory Cell SNM
  閾值電壓對超深亞微米SRAM存儲單元SNM的影響

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