breakdown voltage

基本解釋

The response time is very important in determining the breakdown voltage.
響應(yīng)時(shí)間對(duì)于確定擊穿電壓非常重要。
As shown in Diagram 1, as from the voltage Uc, the leakage current increases very swiftly and the breakdown voltage is reached for value Ue.
正如圖1所示，而從電壓Uc開始，漏電電流迅速增加，擊穿電壓達(dá)到Ue。
The exact determination of the breakdown voltage must therefore be attached to the measurement of an electrical value characteristic of the dielectric breakdown phenomenon.
因此擊穿電壓的檢測(cè)必須重視電介質(zhì)擊穿現(xiàn)象的電參數(shù)值的測(cè)量。

擊穿電壓
Due to the low-doped intrinsic layer and the high critical breakdown electric field, 4H-SiC PiN diodes have very high breakdown voltage.
4H-SiC PiN二極管具有很高的反向擊穿電壓,得益于中間的低摻雜本征層,以及碳化硅材料的高臨界擊穿電場(chǎng)。
壓敏電壓
嘩電壓
鑿穿電壓
崩潰電壓

壓敏電壓
The influence of resistivity of grain and grain boundary on breakdown voltage, the influence of grain size on breakdown voltage and dielectric constant are simply simulated. As a whole, almost computing data are consistent with experimental results.
對(duì)壓敏電阻元件的壓敏電壓隨晶粒電阻率和晶界電阻率的變化，以及壓敏電壓和介電常數(shù)隨晶粒尺寸的變化規(guī)律進(jìn)行了簡(jiǎn)單模擬分析，與實(shí)驗(yàn)結(jié)果基本一致。
機(jī)械工程
擊穿電壓
Analysis and experimental results show that the new polymer nano-composite film can effectively increase the corona inception voltage and breakdown voltage.
分析和實(shí)驗(yàn)表明,這種新型高分子納米復(fù)合薄膜可有效提高間隙的電暈起始電壓和擊穿電壓。
耐壓強(qiáng)度
崩潰電壓
破壞電壓