gate dielectric
基本解釋
- 閘極介電層，柵極絕緣層
英漢例句
- Forming floating grid of gap wall on side wall of dielectric gap wall and gate dielectric layer;
形成一間隙壁浮置柵于該介電間隙壁的一側(cè)壁，且該間隙壁浮置柵位于該柵極介電層之上；
ip.com - In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
實(shí)施例中，本方法包括在半導(dǎo)體襯底上形成柵極電介質(zhì)層。
ip.com - The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.
模擬得出柵極電流與實(shí)驗(yàn)結(jié)果符合，而得出的優(yōu)化氮含量有待實(shí)驗(yàn)證實(shí)。
雙語(yǔ)例句
詞組短語(yǔ)
- Gate Dielectric Technology 閘介極科技
- High K gate Dielectric 電介質(zhì)
- gate dielectric layer 柵極介電層
- gate dielectric hfo 二氧化鉿薄膜
- gate dielectric materials 柵極電介質(zhì)材料
短語(yǔ)
專業(yè)釋義
- 柵介質(zhì)
The results show that the larger the gate dielectric permittivity is, the lower the minimum surface potential is, thus enhancing the capability of the gate to control the channel.
模型的研究結(jié)果表明:相同結(jié)構(gòu)參數(shù)下,柵介質(zhì)介電常數(shù)增大,最小表面勢(shì)值減小,柵控能力增強(qiáng)。 - 柵極電介質(zhì)
Therefore it is an essential approach to search for a new kind of MOSFET gate dielectric materials with high dielectric constant to replace SiO_2.
因此,必須尋找一種新的具有高介電常數(shù)的柵極電介質(zhì)材料來(lái)取代傳統(tǒng)的SiO_2。 - 柵極絕緣層