hemt

基本解釋

Basing on HEMT FET, a mono-stage LNA was designed.
利用HEMT場效應(yīng)管設(shè)計的單級低噪聲放大器的噪聲系數(shù)小于1.;5dB;增益大于11dB。
The HEMT fabricated using this structure demon-strates a noise figure of 0. 76 dB and a gain of 6.5dB at 1? GHz.
用該結(jié)構(gòu)材料制作的HEMT器件在12GHz下;噪聲系數(shù)0.;76dB;相關(guān)增益6
This experiment lays a foundation for the optimization of RTT and RTD HEMT monolithic integration circuit development.
實驗為RTD/HEMT串聯(lián)型RTT性能的優(yōu)化和RTD/HEMT單片集成電路的研制奠定了基礎(chǔ)。
The cold-mode models for HBT and HEMT devices are developed in this dissertation for the circuit design and simulation.
在本論文中，我們對于異質(zhì)介面雙載子電晶體和高電子移動率電晶體研究發(fā)展出非線性模型，此模型可使用于電路設(shè)計與模擬。
To predict the circuit performance, HEMT and CMOS device models used in the designs are described.
為了準(zhǔn)確預(yù)測電路的效能，首先描述了HEMT及CMOS的元件模型。