spin-valve

基本解釋

Reactive ion etching (RIE) process utilized to form giant magnetoresistive (GMR) spin valve sensing elements was investigated experimentally.
對(duì)巨磁電阻自旋閥磁場(chǎng)傳感器制作中的關(guān)鍵技術(shù)之一:自旋閥薄膜的反應(yīng)離子刻蝕(RIE)工藝,進(jìn)行了試驗(yàn)研究。
Magnetic properties were evaluated by VSM and spin valve magnetoresistance was investigated by a four-probe method to study the interlayer coupling of the two magnetic layers.
研究結(jié)果表明,層間耦合效應(yīng)不僅與非磁性中間層的厚度相關(guān),而且與中間層材料的特性相關(guān)。
For example, present-day read heads in computer hard drives use a device dubbed a spin valve, wherein a layer of a nonmagnetic metal is sandwiched between two ferromagnetic metallic layers.
例如，目前的硬碟讀寫頭使用了類似自旋閥的元件，其構(gòu)造是一層非磁性金屬夾在二層鐵磁金屬中間。
Keywords spin valve;AMR;planar Hall effect;
自旋閥;各向異性磁電阻;平面霍爾效應(yīng);
IrMn top spin valves,with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta,were deposited on glass and silicon substrate by high vacuum DC magnetron sputtering.
在玻璃和硅襯底上利用高真空直流磁控濺射的方法淀積了結(jié)構(gòu)為Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta的IrMn頂釘扎自旋閥薄膜。分別研究了增加磁電阻率,降低矯頑力和提高交換場(chǎng)的方法。