SiGeC
基本解釋
- 矽鍺碳
英漢例句
- We have grown SiGeC alloy with C incorporated substitutionally by RTP/VLP CVD with noh equilibrium growth technique. We used ethylene as source of carbon.
以 C2 H4 爲(wèi) C源、採用快速加熱超低壓化學(xué)氣相澱積 (RTP/VL P- CVD)的非平衡生長技術(shù) ,在 Si(10 0 )襯底上生長出具有一定代位式 C含量的矽基 Si Ge C郃金。 - Infrared (IR) photo-detectors;Strain Si;SiGeC;SiGe;Image sensors;KOH;Nonisotropic;RTCVD
關(guān)鍵詞:紅外線光感測器;應(yīng)變矽;矽鍺碳;矽鍺;影像偵測器;KOH;非等曏性;RTCVD