EOTS

基本解釋

Introduce the international origin of EOT.
國(guó)際上的BOT立法模式主要有四種。
These effects were maintained in the 5-day EOT analysis.
在第5天的EOT分析時(shí)仍有這些傚果。
The dielectric constant of the film with an EOT of 2.0 nm is 14.4.
通過(guò)C-V特性的測(cè)試，薄膜表現(xiàn)出14.;4的介電常數(shù)和2
"We haven't any money and we can't get anything to eot.
“我們沒(méi)有錢(qián)，也沒(méi)有東西喫?！薄拔覀儠?huì)找到些喫的。
The best we can do so far is to deposit high-k film with EOT below 1.5nm.
所以目前我們所能達(dá)到的等傚二氧化矽絕緣層厚度大約爲(wèi)1.;5個(gè)奈米。